| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc
|
| AFT26H250W03SR6 AFT26H250W03S-24S |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
| GRM21BR71H104KA01B GRM21BR71H105KA12L 2508051107Y0 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| LET8180 |
RF POWER TRANSISTORS Ldmos Enhanced Technology
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| LET20030S |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| AFT21S232SR3 AFT21S230SR3 |
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
